STW9NA80 datasheet by STMicroelectronics.
| Part number | STW9NA80 |
|---|---|
| Datasheet | STW9NA80_STMicroelectronics.pdf |
| File Size | 132.12 KB |
| Manufacturer | STMicroelectronics |
| Description | N-Channel 800V MOSFET |
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Unit V µA µA nA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 30 V T c = 100 C o ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Test Con ditions ID = 250 µ A ID = 4.5 A 9.1 Min. 3.75 1 Unit V Ω A Static Drain-source O n V GS = 10V Resistance On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS...
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