ST03N20 Datasheet | STANSON

DESCRIPTION ST03N20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOT-89-3L FEATURE ! 200V/2A, RDS(ON) = 850m @VGS = 10V ! Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ! SOT-89 package design 0320 : Product Code A : Date Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2008, Stanson Corp. ST03N20 2014. V1 N Channel Enhancement Mode MOSFET 1.9A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Power Dissipation TA=25℃ TA=100℃ VGSS ID TA=25℃ Operation Junction Temperature Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 200 ±30 1.9 0.8 9 1.78 -55/150 -55/150 Unit V V A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2008, Stanson Corp. ST03N20 2014....