ST03N20 - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

ST03N20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

STANSON

📥 Download Datasheet

Datasheet Details

Part number	ST03N20
Manufacturer	STANSON
File Size	551.87 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	ST03N20 Datasheet
Additional preview pages of the ST03N20 datasheet.

📁 Similar Datasheet

ST03-240F1 - TVS (SHINDENGEN)
ST03-43F1 - TVS (SHINDENGEN)
ST03-47F1 - TVS (SHINDENGEN)
ST03-58F1 - TVS (SHINDENGEN)
ST03-68F1 - TVS (SHINDENGEN)
ST0361D4 - 1-Line Bi-directional TVS Diode (Sursemi)
ST03D-140 - Power Clamper (SHINDENGEN)
ST03D-170 - Power Clamper (SHINDENGEN)
ST03D-200 - Power Clamper (SHINDENGEN)
ST03D-82 - Power Clamper (SHINDENGEN)

Other Datasheets by STANSON

ST04N20D - N-Channel Enhancement Mode MOSFET
ST05N20 - N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text

ST03N20 N Channel Enhancement Mode MOSFET 1.9A DESCRIPTION ST03N20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOT-89-3L FEATURE ! 200V/2A, RDS(ON) = 850m @VGS = 10V ! Super high density cell design for extremely low RDS(ON) ! Exceptional on-resistance and maximum DC current capability ! SOT-89 package design 0320 : Product Code A : Date Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.

Published: Sep 3, 2018 |