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ST03N20
N Channel Enhancement Mode MOSFET
1.9A
DESCRIPTION
ST03N20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOT-89-3L
FEATURE
! 200V/2A, RDS(ON) = 850m @VGS = 10V
! Super high density cell design for extremely low RDS(ON)
! Exceptional on-resistance and maximum DC current capability
! SOT-89 package design
0320 : Product Code A : Date Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.
ST03N20 Datasheet
