ST05N20 Datasheet PDF

STANSON ST05N20

ST05N20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.

Part No.	ST05N20
Datasheet	ST05N20 Download
Manufacturer	STANSON
Description	N-Channel Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION SOT-223 FEATURE l● 200V/2.0A, RDS(ON) = 800m @VGS = 10V l● Super high density cell design for extremely low RDS(ON) l● Exceptional on-resistance and maximum DC current capability l● SOT-223 package design 0520 : Product Code A : Date Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2008, Stanson Corp. ST05N20 2014. V1 ST05N20 N Channel Enhancement Mode MOSFET 2.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Symbol VDSS TA=25℃ TA=100℃ VGSS ID IDM Typical 200 ±30 2 0.8 10 Repetitive Avalanche Current EAS 4.2 Power Dissipation TA=25℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient PD TJ TSTG RθJA 1.78 -55/150 -55/150 75 Unit V V A A mJ W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2008, Stanson Corp. ST05N20 2014.