ST05N20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | ST05N20 |
|---|---|
| Manufacturer | STANSON |
| File Size | 615.23 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 ST05N20 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| ST050 | (ST Series) Transformers | Carlo Gavazzi |
| ST050 | (ST040 / ST050) Scanner Driver | Laser Scanning Keiser |
| ST0521D2 | 1-Line Ultra Low Capacitance Bi-directional TVS Diode | Sursemi |
| ST0521D4 | 1-Line Ultra Low Capacitance Bi-directional TVS Diode | Sursemi |
| ST0521S5 | 1-Line Low Capacitance Bi-directional TVS Diode | Sursemi |
| Part Number | Description |
|---|---|
| ST03N20 | N-Channel Enhancement Mode MOSFET |
| ST04N20D | N-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
