ST05N20 Datasheet | STANSON

DESCRIPTION ST05N20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOT-223 FEATURE l- 200V/2.0A, RDS(ON) = 800m @VGS = 10V l- Super high density cell design for extremely low RDS(ON) l- Exceptional on-resistance and maximum DC current capability l- SOT-223 package design 0520 : Product Code A : Date Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2008, Stanson Corp. ST05N20 2014. V1 N Channel Enhancement Mode MOSFET 2.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Symbol VDSS TA=25℃ TA=100℃ VGSS ID Typical ±30 2 0.8 10 Repetitive Avalanche Current Power Dissipation TA=25℃ Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient PD TJ TSTG RθJA 1.78 -55/150 -55/150 Unit V V A A m J W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2008, Stanson Corp. ST05N20 2014. V1 N Channel Enhancement Mode...