ST13P10 Overview
ST13P10 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST13P10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
ST13P10 Key Features
- 100V/-13.0A, RDS(ON) = 130mΩ @VGS = -10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- TO-252,TO-251 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Squar
- VDSS Typical -100 Unit V Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current VGSS