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ST13P10D - P-Channel Enhancement Mode MOSFET

General Description

ST13P10D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Datasheet Details

Part number ST13P10D
Manufacturer STANSON
File Size 905.93 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST13P10D Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST13P10D P Channel Enhancement Mode MOSFET -13.0A DESCRIPTION ST13P10D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST13P10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or onventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) FEATURE TO-252 l -100V/-13.