ST13P10D Overview
ST13P10D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST13P10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or onventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
ST13P10D Key Features
- 100V/-13.0A, RDS(ON) = 130mΩ @VGS = -10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- TO-252 package design PART MARKING Y: Year Code A: Process Code B：Wafer Code STANSON TECHNOLOGY 120 Bentley
- VDSS Typical -100 Unit V Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current VGSS