ST16N10 - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STANSON

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Datasheet Details

Part number	ST16N10
Manufacturer	STANSON
File Size	0.96 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	ST16N10 Datasheet
Additional preview pages of the ST16N10 datasheet.

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Full PDF Text Transcription

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ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Published: Jan 25, 2015 |