ST16N10 Datasheet PDF

STANSON ST16N10

ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Part No.	ST16N10
Datasheet	ST16N10 Download
Manufacturer	STANSON
Description	N-Channel Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE 100V/ 10A, RDS(ON) = 140mΩ @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2009, Stanson Corp. ST16N10 2009. V1 ST16N10 N Channel Enhancement Mode MOSFET 16.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current (TJ=150℃) TA=25℃ TA=100℃ ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ PD Operation Junction Temperature TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 100 ±20 16.0 12.0 60 16 79 150 -55/150 110 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2009, Stanson Corp.