Datasheet4U Logo Datasheet4U.com

ST18N10D - N-Channel Enhancement Mode MOSFET

General Description

ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

📥 Download Datasheet

Datasheet Details

Part number ST18N10D
Manufacturer STANSON
File Size 611.15 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST18N10D Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ST18-AU1 SIX-CHANNEL DOLBY AC3/MPEG2 AUDIO DECODER ST Microelectronics
ST1800-25T4MI Wet Tantalum Capacitors Vishay
ST1802FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics
ST1802FX HIGH VOLTAGE FAST - SWITCHING NPN POWER TRANSISTOR ST Microelectronics
ST1802HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics

Other Datasheets by STANSON

Part Number Description
ST18ADN N-Channel Enhancement Mode MOSFET
ST13P10 P-Channel Enhancement Mode MOSFET
ST13P10D P-Channel Enhancement Mode MOSFET
ST16N10 N-Channel Enhancement Mode MOSFET
ST1937 DC-DC Step-Up Converter

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ST18N10D N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION ST18N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST18N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 FEATURE ! 100V/12.0A, RDS(ON) = 90mΩ(Typ.) @VGS = 10V ! 100V/8.0A, RDS(ON) = 100mΩ @VGS = 4.