Datasheet4U Logo Datasheet4U.com

ST25N10 - N-Channel Enhancement Mode MOSFET

General Description

ST25N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

📥 Download Datasheet

Datasheet Details

Part number ST25N10
Manufacturer STANSON
File Size 860.06 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST25N10 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ST250-75L2MI Wet Tantalum Capacitors Vishay
ST25C01 SERIAL 1K 128 x 8 EEPROM ST Microelectronics
ST25C04 4-Kbit Serial I2C Bus EEPROM ST Microelectronics
ST25C08 8-Kbit Serial I2C Bus EEPROM ST Microelectronics
ST25C16 16-Kbit Serial I2C Bus EEPROM ST Microelectronics

Other Datasheets by STANSON

Part Number Description
ST2341 P-Channel Enhancement Mode MOSFET
ST2341A P-Channel Enhancement Mode MOSFET
ST2342 N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ST25N10 N Channel Enhancement Mode MOSFET 25.0A DESCRIPTION ST25N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 FEATURE 100V/12.0A, RDS(ON) = 40mΩ @VGS = 10V 100V/10.0A, RDS(ON) = 45mΩ @VGS =4.