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ST36N10D - 36A N-Channel Enhancement Mode MOSFET

Description

STN36N10D is used trench technology to provide excellent RDS(on) and gate charge.

Those devices are suitable for use as load switch or in PWM applications.

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Datasheet Details

Part number ST36N10D
Manufacturer STANSON
File Size 629.08 KB
Description 36A N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST36N10D Datasheet
Additional preview pages of the ST36N10D datasheet.

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Full PDF Text Transcription

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ST36N10D N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION STN36N10D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO-252 FEATURE l 100V/20.0A, RDS(ON) = 40mΩ (Typ.) @VGS = 10V l 100V/20.0A, RDS(ON) = 42mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design PART MARKING Y: Year Code A: Date Code Q: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST36N10D 2009. V1 ST36N10D N Channel Enhancement Mode MOSFET 36.
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