ST36N10D
ST36N10D is 36A N-Channel Enhancement Mode MOSFET manufactured by STANSON.
DESCRIPTION
STN36N10D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION TO-252
FEATURE l 100V/20.0A, RDS(ON) = 40mΩ (Typ.) @VGS = 10V l 100V/20.0A, RDS(ON) = 42mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Date Code Q: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech.
Copyright © 2009, Stanson Corp.
ST36N10D 2009. V1
N Channel Enhancement Mode MOSFET
36.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
VGSS ID
±20
36.0 14.0
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
83 30
Operation Junction Temperature
Storgae Temperature Range
TSTG
-55/175
Thermal Resistance-Junction to...
