ST47P06D Datasheet PDF

STANSON ST47P06D

ST47P06D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power management and other battery circuits where high-side switching.

Part No.	ST47P06D
Datasheet	ST47P06D Download
Manufacturer	STANSON
Description	P-Channel Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION FEATURE -60V/-24A, RDS(ON) = 22mΩ (Typ.) @VGS = -10V -60V/-10A, RDS(ON) = 30mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design ABSOULTE

MAXIMUM RATINGS

(Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150 ) Pulsed Drain Current Power Dissipation Operation Junction Temperature Storgae Temperature Range TA=25 TA=80 TA=25 Symb ol VDSS VGSS ID IDM PD TJ TSTG Typical -60 ±20 -47.0 -33.0 -180 160 -55/150 -55/150 Thermal Resistance-Junction to Ambient RθJA 62 Unit V V A A W /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2009, Stanson Corp. ST47P06D 2010. V1 ST47P06D P Channel Enhancement Mode MOSFET -47.0A

ELECTRICAL CHARACTERISTICS

( Ta = 25 Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold...