• Part: ST47P06D
  • Description: P-Channel Enhancement Mode MOSFET
  • Manufacturer: STANSON
  • Size: 692.63 KB
Download ST47P06D Datasheet PDF
ST47P06D page 2
Page 2
ST47P06D page 3
Page 3

Datasheet Summary

P Channel Enhancement Mode MOSFET -47.0A DESCRIPTION ST47P06D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook puter power management and other battery circuits where high-side switching. PIN CONFIGURATION FEATURE -60V/-24A, RDS(ON) = 22mΩ (Typ.) @VGS = -10V -60V/-10A, RDS(ON) = 30mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package...