ST75N75
ST75N75 is 75A N-Channel Enhancement Mode MOSFET manufactured by STANSON.
DESCRIPTION
ST75N75 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION TO220-3L
FEATURE
75V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-220 package design
MARKING
PIN CONFI
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech.
Copyright © 2009, Stanson Corp.
ST75N75 2011. V1
N Channel Enhancement Mode MOSFET
75.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current
Avalanche Current
Symbol
VDSS
TA=25℃ TA=70℃
VGSS ID
Typical
±20 93.0 75.0 370
Power Dissipation
TA=25℃
Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient
TJ TSTG RθJA
175 -55/175
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech.
Copyright © 2009, Stanson Corp.
ST75N75 2011....
