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STC4606 - N&P Pair Enhancement Mode MOSFET

General Description

The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

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Datasheet Details

Part number STC4606
Manufacturer STANSON
File Size 725.59 KB
Description N&P Pair Enhancement Mode MOSFET
Datasheet download datasheet STC4606 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STC4606 N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 FEATURE N-Channel 30V/6.9A, RDS(ON) = 30mΩ（Typ） @VGS = 10V 30V/6.0A, RDS(ON) = 46mΩ @VGS = 4.5V P-Channel -30V/-6.0A, RDS(ON) = 41mΩ（Typ） @VGS = -10V -30V/-5.0A, RDS(ON)= 60mΩ @VGS = - 4.