STC4606 Datasheet | STANSON

N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook puter power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 FEATURE N-Channel 30V/6.9A, RDS(ON) = 30mΩ（Typ） @VGS = 10V 30V/6.0A, RDS(ON) = 46mΩ @VGS = 4.5V P-Channel -30V/-6.0A,...