STC4606 Datasheet PDF

STANSON STC4606

The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed.

Part No.	STC4606
Datasheet	STC4606 Download
Manufacturer	STANSON
Description	N&P Pair Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION SOP-8 FEATURE N-Channel 30V/6.9A, RDS(ON) = 30mΩ（Typ） @VGS = 10V 30V/6.0A, RDS(ON) = 46mΩ @VGS = 4.5V P-Channel -30V/-6.0A, RDS(ON) = 41mΩ（Typ） @VGS = -10V -30V/-5.0A, RDS(ON)= 60mΩ @VGS = - 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package PART MARKING SOP-8 Y∶Year A∶Date Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STC4606 2008. V1 STC4606 N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Typical P -30 ±20 -6.9 -5.0 -30 -3.0 2.0 1.44 150 -55/150 62.5 110 62.5 110 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient T≦10Sec Sready State Symbol VDSS...