The STP2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | STP2301 |
|---|---|
| Manufacturer | STANSON |
| File Size | 370.56 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Datasheet |
 STP2301 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STP2301 | P-Channel Enhancement Mode MOSFET | Semtron |
| STP2301 | P-Channel MOSFET | VBsemi |
| STP2301S | Single P-Channel MOSFET | Semtron |
| STP2305 | P-Channel Enhancement Mode MOSFET | Semtron |
| STP2305A | -20V P-Channel Enhancement Mode MOSFET | Semtron |
| Part Number | Description |
|---|---|
| STP2327 | P-Channel Enhancement Mode MOSFET |
| STP4189D | P-Channel Enhancement Mode MOSFET |
| STP4403 | P-Channel Enhancement Mode MOSFET |
| STP4407 | P-Channel Enhancement Mode MOSFET |
| STP4441 | P-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
