Datasheet Details
| Part number | STP2301 |
|---|---|
| Manufacturer | STANSON |
| File Size | 370.56 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Datasheet | STP2301-STANSON.pdf |
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Overview: STP2301 P Channel Enhancement Mode MOSFET -2.8A.
| Part number | STP2301 |
|---|---|
| Manufacturer | STANSON |
| File Size | 370.56 KB |
| Description | P-Channel Enhancement Mode MOSFET |
| Datasheet | STP2301-STANSON.pdf |
|
|
|
The STP2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
STP2301 | P-Channel Enhancement Mode MOSFET | Semtron |
 |
STP2301 | P-Channel MOSFET | VBsemi |
|
STP2301S | Single P-Channel MOSFET | Semtron |
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