DESCRIPTION
PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE -20V/-2.8A, RDS(ON) = 90m-ohm (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 110m-ohm @VGS = -2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 3 S01YA 1 2 Y: Year Code A: Process Code 1 STP2301 2007. V1 86-755-83468588 86-755-83755599 STP2301 P Channel Enhancement Mode MOSFET -2.8A ABSOULTE MAXIMUM RATINGS
(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS -20 Gate-Source Voltage Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM ±12 -2.8 -1.5 -10 Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ TA=70℃ PD Operation Junction Temperature TJ -1.6 1.25 0.8 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 120 Unit V V A A A W ℃ ℃ ℃/W 2 STP2301 2007. V1 86-755-83468588 86-755-8375...
STANSON
