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STP2301 - P-Channel Enhancement Mode MOSFET

General Description

The STP2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

advanced trench technology to provide excellent RDS(ON).

.low gate charge and operation gate as 2.5V.

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Datasheet Details

Part number STP2301
Manufacturer Semtron
File Size 368.76 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP2301 Datasheet

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P-Channel Enhancement Mode MOSFET STP2301 -20V P-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STP2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general applications.  -20V/-3.0A, RDS(ON) =80mΩ(typ.)@VGS =-4.5V  -20V/-2.0A, RDS(ON) =105mΩ(typ.)@VGS =-2.