STP9434 Datasheet PDF

STANSON STP9434

STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

Part No.	STP9434
Datasheet	STP9434 Download
Manufacturer	STANSON
Description	P Channel Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION SOP-8 PART MARKING SOP-8 FEATURE -20V/-7.2A, RDS(ON) = 40mΩ @VGS = -4.5V -20V/-5.2A, RDS(ON) = 52mΩ @VGS = -2.5V -20V/-3.6A, RDS(ON) = 62mΩ @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design Y:Year Code A:Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp. STP9434 2010. V1 STP9434 P Channel Enhancement Mode MOSFET - 7.2A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical -20 ±12 -7.6 -5.4 -30 -2.3 2.8 1.8 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA Copyright © 2007, Stanson Corp.