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GD1000HFA120C6S_B39 - IGBT

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • Short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper pinfin baseplate using AMB technology Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GD1000HFA120C6S_B39 STARPOWER SEMICONDUCTOR GD1000HFA120C6S_B39 1200V/1000A 2 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  Short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper pinfin baseplate using AMB technology Typical Applications  Hybrid and electric vehicle  Inverter for motor drive  Uninterruptible power supply Equivalent Circuit Schematic ©2024 STARPOWER Semiconductor Ltd.