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GD1000HFX170P2S Datasheet IGBT

Manufacturer: STARPOWER

Overview: GD1000HFX170P2S STARPOWER SEMICONDUCTOR GD1000HFX170P2S 1700V/1000A 2 in.

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as wind power.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Enlarged Diode for regenerative operation.
  • Isolated copper baseplate using DBC technology.
  • High power and thermal cycling capability Typical.

GD1000HFX170P2S Distributor