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GD1000HFX170P2S - IGBT

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as wind power.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Enlarged Diode for regenerative operation.
  • Isolated copper baseplate using DBC technology.
  • High power and thermal cycling capability Typical.

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Datasheet Details

Part number GD1000HFX170P2S
Manufacturer STARPOWER
File Size 189.12 KB
Description IGBT
Datasheet download datasheet GD1000HFX170P2S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GD1000HFX170P2S STARPOWER SEMICONDUCTOR GD1000HFX170P2S 1700V/1000A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as wind power. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Enlarged Diode for regenerative operation  Isolated copper baseplate using DBC technology  High power and thermal cycling capability Typical Applications  High Power Converter  Wind Power  Auxiliary Inverter Equivalent Circuit Schematic IGBT Module IGBT ©2019 STARPOWER Semiconductor Ltd.