GD100PIA120C6SN Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features - Low VCE(sat) Trench IGBT technology - 8μs short circuit capability - VCE(sat) with positive temperature coefficient - Maximum junction temperature 175o C - Low inductance case - Fast & soft reverse recovery anti-parallel FWD - Isolated copper baseplate using DBC technology Typical Applications - Inverter for motor drive - AC and DC servo drive amplifier - Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd. 10/21/2024 1/12 B01 IGBT Module Absolute Maximum Ratings TC=25o C unless otherwise noted IGBT-inverter Symbol VCES VGES IC ICRM Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=100o C Repetitive Peak Collector Current tp limited by Tvjop Diode-inverter Symbol VRRM IF IFRM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Repetitive Peak Forward Current tp limited by Tvjop Diode-rectifier Symbol VRRM IFRMSM IRMSM IFSM I2t Description Repetitive Peak Reverse Voltage Maximum RMS Forward Current per Chip @ TC=110o C Maximum RMS Current at Rectifier Output @ TC=110o C Surge Forward Current tp=10ms @ Tvj=25o C @ Tvj=150o C I2t-value,tp=10ms @ Tvj=25o C @ Tvj=150o...