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GD100PIT120C6SN_G8 - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175℃.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD100PIT120C6SN_G8

Datasheet Details

Part number GD100PIT120C6SN_G8
Manufacturer STARPOWER
File Size 469.04 KB
Description IGBT
Datasheet download datasheet GD100PIT120C6SN_G8 Datasheet
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Full PDF Text Transcription

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GD100PIT120C6SN_G8 STARPOWER SEMICONDUCTOR GD100PIT120C6SN_G8 Molding Type Module 1200V/100A PIM in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175℃  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply ©2013 STARPOWER Semiconductor Ltd. 1/26/2013 1/13 Rev.
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