STARPOWER GD10FSX65L4SN
IGBT
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.FEATURES
● Low VCE(sat) Trench IGBT technology● Low switching loss
● 6μs short circuit capability
● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175oC
● Fast & soft reverse recovery anti-parallel FWD
● Isolated heatsink using DBC technology Typical
APPLICATIONS
● Inverter for motor drive● AC and DC servo drive amplifier
● Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd. 11/25/2024 1/9 B02 GD10FSX65L4SN IGBT Module
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted IGBT-inverter Symbol VCES VGES IC ICM PDDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=100oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tvj=175oC Diode-inverter Symbol VRRM...