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GD10FSX65L4S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • Low switching loss.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology Typical.

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Datasheet preview – GD10FSX65L4S

Datasheet Details

Part number GD10FSX65L4S
Manufacturer STARPOWER
File Size 217.32 KB
Description IGBT
Datasheet download datasheet GD10FSX65L4S Datasheet
Additional preview pages of the GD10FSX65L4S datasheet.

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Full PDF Text Transcription

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GD10FSX65L4S STARPOWER SEMICONDUCTOR GD10FSX65L4S 650V/10A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2018 STARPOWER Semiconductor Ltd.
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