GD10FSX65L4S Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features - Low VCE(sat) Trench IGBT technology - Low switching loss - 6μs short circuit capability - VCE(sat) with positive temperature coefficient - Maximum junction temperature 175o C - Fast & soft reverse recovery anti-parallel FWD - Isolated heatsink using DBC technology Typical Applications - Inverter for motor drive - AC and DC servo drive amplifier - Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2018 STARPOWER Semiconductor Ltd. 10/29/2018 1/9 Preliminary IGBT Module Absolute Maximum Ratings TC=25o C unless otherwise noted IGBT-inverter Symbol VCES VGES ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25o C @ TC=100o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C Diode-inverter Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min Value Unit...