STARPOWER GD200FFX65C6S
IGBT
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.FEATURES
● Low VCE(sat) Trench IGBT technology● 6μs short circuit capability
● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175oC
● Low inductance case
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper baseplate using DBC technology Typical
APPLICATIONS
● Inverter for motor drive● AC and DC servo drive amplifier
● Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2022 STARPOWER Semiconductor Ltd. 5/11/2022 1/9 Preliminary GD200FFX65C6S IGBT Module
ABSOLUTE MAXIMUM RATINGS
TC=25oC unless otherwise noted IGBT Symbol VCES VGES IC ICM PDDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25oC @ TC=60oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175oC Diode Symbol VRRM IF I...