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GD200FFX65C6SF - IGBT

Datasheet Summary

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology.
  • PressFIT contact technology Typical.

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Datasheet preview – GD200FFX65C6SF

Datasheet Details

Part number GD200FFX65C6SF
Manufacturer STARPOWER
File Size 486.86 KB
Description IGBT
Datasheet download datasheet GD200FFX65C6SF Datasheet
Additional preview pages of the GD200FFX65C6SF datasheet.

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Full PDF Text Transcription

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GD200FFX65C6SF STARPOWER SEMICONDUCTOR GD200FFX65C6SF 650V/200A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology  PressFIT contact technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2020 STARPOWER Semiconductor Ltd.
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