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GD450HFY120C6S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD450HFY120C6S

Datasheet Details

Part number GD450HFY120C6S
Manufacturer STARPOWER
File Size 474.64 KB
Description IGBT
Datasheet download datasheet GD450HFY120C6S Datasheet
Additional preview pages of the GD450HFY120C6S datasheet.

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Full PDF Text Transcription

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GD450HFY120C6S STARPOWER SEMICONDUCTOR GD450HFY120C6S 1200V/450A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Hybrid and electric vehicle  Inverter for motor drive  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2021 STARPOWER Semiconductor Ltd.
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