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GD450HTX75P7SB - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Features

  • Low VCE(sat) Trench IGBT technology.
  • Low switching losses.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper baseplate using DBC technology Typical.

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Datasheet preview – GD450HTX75P7SB

Datasheet Details

Part number GD450HTX75P7SB
Manufacturer STARPOWER
File Size 548.26 KB
Description IGBT
Datasheet download datasheet GD450HTX75P7SB Datasheet
Additional preview pages of the GD450HTX75P7SB datasheet.

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Full PDF Text Transcription

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GD450HTX75P7SB STARPOWER SEMICONDUCTOR GD450HTX75P7SB 750V/450A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  Low switching losses  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper baseplate using DBC technology Typical Applications  Automotive application  Hybrid and electric vehicle  Inverter for motor drive Equivalent Circuit Schematic IGBT Module IGBT ©2023 STARPOWER Semiconductor Ltd.
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