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GD50PJX65L3S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology Typical.

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Datasheet preview – GD50PJX65L3S

Datasheet Details

Part number GD50PJX65L3S
Manufacturer STARPOWER
File Size 679.69 KB
Description IGBT
Datasheet download datasheet GD50PJX65L3S Datasheet
Additional preview pages of the GD50PJX65L3S datasheet.

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Full PDF Text Transcription

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GD50PJX65L3S STARPOWER SEMICONDUCTOR GD50PJX65L3S 650V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2020 STARPOWER Semiconductor Ltd.
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