Datasheet4U Logo Datasheet4U.com

GD50PJX65L3SF - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology.
  • PressFIT contact technology Typical.

📥 Download Datasheet

Datasheet preview – GD50PJX65L3SF

Datasheet Details

Part number GD50PJX65L3SF
Manufacturer STARPOWER
File Size 726.00 KB
Description IGBT
Datasheet download datasheet GD50PJX65L3SF Datasheet
Additional preview pages of the GD50PJX65L3SF datasheet.
Other Datasheets by STARPOWER

Full PDF Text Transcription

Click to expand full text
GD50PJX65L3SF STARPOWER SEMICONDUCTOR GD50PJX65L3SF 650V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated heatsink using DBC technology  PressFIT contact technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2022 STARPOWER Semiconductor Ltd.
Published: |