GD600HTA75P6H Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features - Low VCE(sat) Trench IGBT technology - Low switching losses - 6μs short circuit capability - VCE(sat) with positive temperature coefficient - Maximum junction temperature 175o C - Low inductance case - Fast & soft reverse recovery anti-parallel FWD - Isolated copper pinfin baseplate using DBC technology Typical Applications - Automotive application - Hybrid and electric vehicle - Inverter for motor drive Equivalent Circuit Schematic ©2023 STARPOWER Semiconductor Ltd. 7/15/2023 1/11 B01 IGBT Module Absolute Maximum Ratings TF=25o C unless otherwise noted IGBT Symbol VCES VGES ICN IC ICM Description Collector-Emitter Voltage Gate-Emitter Voltage Implemented Collector Current Collector Current @ TF=90o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ TF=75o C Tvj=175o C Values Unit ±20 Diode Symbol VRRM IFN IF IFM Description Repetitive Peak Reverse Voltage Implemented Collector Current Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Values Unit...