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GD600HTX65P4S - IGBT

Datasheet Summary

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicles.

Features

  • Low VCE(sat) Trench IGBT technology.
  • Low switching losses.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper pinfin baseplate using DBC technology Typical.

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Datasheet preview – GD600HTX65P4S

Datasheet Details

Part number GD600HTX65P4S
Manufacturer STARPOWER
File Size 279.90 KB
Description IGBT
Datasheet download datasheet GD600HTX65P4S Datasheet
Additional preview pages of the GD600HTX65P4S datasheet.

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Full PDF Text Transcription

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GD600HTX65P4S STARPOWER SEMICONDUCTOR GD600HTX65P4S 650V/600A 6 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicles. Features  Low VCE(sat) Trench IGBT technology  Low switching losses  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper pinfin baseplate using DBC technology Typical Applications  Hybrid and electric vehicles  Inverter for motor drive  Uninterruptible power supply Equivalent Circuit Schematic ©2018 STARPOWER Semiconductor Ltd.
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