GD600HTX65P4S Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicles. Features - Low VCE(sat) Trench IGBT technology - Low switching losses - VCE(sat) with positive temperature coefficient - Maximum junction temperature 175o C - Low inductance case - Fast & soft reverse recovery anti-parallel FWD - Isolated copper pinfin baseplate using DBC technology Typical Applications - Hybrid and electric vehicles - Inverter for motor drive - Uninterruptible power supply Equivalent Circuit Schematic ©2018 STARPOWER Semiconductor Ltd. 3/27/2018 1/10 Preliminary IGBT Module Absolute Maximum Ratings TF=25o C unless otherwise noted IGBT Symbol VCES VGES ICN ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Implemented Collector Current Collector Current @ TF=25o C @ TF=80o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C Diode Symbol VRRM IFN IF IFM Description Repetitive Peak Reverse Voltage Implemented Collector Current Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Module Symbol Tjmax Tjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min Values Unit ±20...