GD600HTX65P4S - IGBT

STARPOWER

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicles.

Key Features

Low VCE(sat) Trench IGBT technology.
Low switching losses.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper pinfin baseplate using DBC technology Typical.

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GD600HTX65P4S igbt by STARPOWER - Datasheet Preview

Datasheet Details

Part number	GD600HTX65P4S
Manufacturer	STARPOWER
File Size	279.90 KB
Description	IGBT
Datasheet	GD600HTX65P4S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GD600HTX65P4S STARPOWER SEMICONDUCTOR GD600HTX65P4S 650V/600A 6 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicles. Features  Low VCE(sat) Trench IGBT technology  Low switching losses  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper pinfin baseplate using DBC technology Typical Applications  Hybrid and electric vehicles  Inverter for motor drive  Uninterruptible power supply Equivalent Circuit Schematic ©2018 STARPOWER Semiconductor Ltd.