STARPOWER GD660HTX75P7HB
IGBT
| Part No. | GD660HTX75P7HB |
|---|---|
| Datasheet | GD660HTX75P7HB Download |
| Manufacturer |  STARPOWER |
| Description | IGBT |
| Buy | Stock & Price |
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.FEATURES
● Low VCE(sat) Trench IGBT technology● Low switching losses
● 6μs short circuit capability
● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175oC
● Low inductance case
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper pinfin baseplate using Si3N4 AMB technology Typical
APPLICATIONS
● Automotive application● Hybrid and electric vehicle
● Inverter for motor drive Equivalent Circuit Schematic ©2023 STARPOWER Semiconductor Ltd. 2/28/2022 1/11 B04 GD660HTX75P7HB IGBT Module
ABSOLUTE MAXIMUM RATINGS
TF=25oC unless otherwise noted IGBT Symbol VCES VGES ICN IC ICM PDDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Implemented Collector Current Collector Current @ TF=105oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ T...
