GD820HTX75P6HB - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Features

Low VCE(sat) Trench IGBT technology.
Low switching losses.
6μs short circuit capability.
VCE(sat) with positive temperature coefficient.
Maximum junction temperature 175oC.
Low inductance case.
Fast & soft reverse recovery anti-parallel FWD.
Isolated copper pinfin baseplate using DBC technology Typical.

STARPOWER

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Datasheet Details

Part number	GD820HTX75P6HB
Manufacturer	STARPOWER
File Size	668.01 KB
Description	IGBT
Datasheet	GD820HTX75P6HB Datasheet
Additional preview pages of the GD820HTX75P6HB datasheet.

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Full PDF Text Transcription

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GD820HTX75P6HB STARPOWER SEMICONDUCTOR GD820HTX75P6HB 750V/820A 6 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  Low switching losses  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper pinfin baseplate using DBC technology Typical Applications  Automotive application  Hybrid and electric vehicle  Inverter for motor drive Equivalent Circuit Schematic ©2022 STARPOWER Semiconductor Ltd.

Published: Jun 15, 2025 |