STARPOWER GD820HTX75P6HL
IGBT
GENERAL DESCRIPTION
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.FEATURES
● Low VCE(sat) Trench IGBT technology● Low switching losses
● 6μs short circuit capability
● VCE(sat) with positive temperature coefficient
● Maximum junction temperature 175oC
● Low inductance case
● Fast & soft reverse recovery anti-parallel FWD
● Isolated copper pinfin baseplate using DBC technology Typical
APPLICATIONS
● Automotive application● Hybrid and electric vehicle
● Inverter for motor drive Equivalent Circuit Schematic ©2019 STARPOWER Semiconductor Ltd. 7/24/2019 1/9 GD820HTX75P6HL IGBT Module
ABSOLUTE MAXIMUM RATINGS
TF=25oC unless otherwise noted IGBT Symbol VCES VGES ICN IC ICM PDDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Implemented Collector Current Collector Current @ TF=60oC Pulsed Collector Current tp=1ms Maximum Power Dissipation @ TF=75oC Tj=17...