GD950HTA75P6HFT
GD950HTA75P6HFT is IGBT manufactured by STARPOWER.
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.
Features
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using Si3N4 AMB technology
Typical Applications
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Equivalent Circuit Schematic
©2024 STARPOWER Semiconductor Ltd. 1/26/2024 1/11 Preliminary
IGBT Module
Absolute Maximum Ratings TF=25o C unless otherwise noted
IGBT
Symbol VCES VGES ICN IC ICM
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Implemented Collector Current Collector Current @ TF=120o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ TF=75o C Tj=175o C
Values
Unit
±20
Diode
Symbol VRRM IFN IF IFM
Description
Repetitive Peak Reverse Voltage Implemented Collector Current Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms
Values
Unit
Module
Symbol...
