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GD950HTA75P6HFT - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as hybrid and electric vehicle.

Features

  • Low VCE(sat) Trench IGBT technology.
  • Low switching losses.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated copper pinfin baseplate using Si3N4 AMB technology Typical.

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Datasheet Details

Part number GD950HTA75P6HFT
Manufacturer STARPOWER
File Size 646.05 KB
Description IGBT
Datasheet download datasheet GD950HTA75P6HFT Datasheet

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Full PDF Text Transcription

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GD950HTA75P6HFT STARPOWER SEMICONDUCTOR GD950HTA75P6HFT 750V/950A 6 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  Low switching losses  6μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Fast & soft reverse recovery anti-parallel FWD  Isolated copper pinfin baseplate using Si3N4 AMB technology Typical Applications  Automotive application  Hybrid and electric vehicle  Inverter for motor drive Equivalent Circuit Schematic ©2024 STARPOWER Semiconductor Ltd.
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