GD900HFA120C6S Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features - Low VCE(sat) Trench IGBT technology - Short circuit capability - VCE(sat) with positive temperature coefficient - Maximum junction temperature 175o C - Low inductance case - Fast & soft reverse recovery anti-parallel FWD - Isolated copper baseplate using DBC technology Typical Applications - Hybrid and electric vehicle - Inverter for motor drive - Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2023 STARPOWER Semiconductor Ltd. 12/8/2023 1/9 B03 IGBT Module Absolute Maximum Ratings TC=25o C unless otherwise noted IGBT Symbol VCES VGES IC ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=90o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C Diode Symbol VRRM IF IFM IFSM I2t Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Surge Forward Current tp=10ms @ Tj=125o C @ Tj=175o C I2t-value,tp=10ms @ Tj=125o C @ Tj=175o C Module Symbol Tjmax Tjop TSTG...