GD900SGF120A3SN Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as high power converters. Features - Low VCE(sat) Trench IGBT technology - VCE(sat) with positive temperature coefficient - Fast & soft reverse recovery anti-parallel FWD - Low inductance case - Al Si C baseplate for high power cycling capability - Al N substrate for low thermal resistance Typical Applications - Inverter for motor drive - AC and DC servo drive amplifier - Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2024 STARPOWER Semiconductor Ltd. 3/28/2024 1/9 B01 IGBT Module Absolute Maximum Ratings TC=25o C unless otherwise noted IGBT Symbol VCES VGES ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25o C @ TC=100o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tvj=175o C Diode Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Module Symbol Tvjmax Tvjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min Value...