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GD900HFY120P1S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as electric vehicle and solar power.

Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Isolated copper baseplate using DBC technology.
  • High power and thermal cycling capability Typical.

📥 Download Datasheet

Datasheet Details

Part number GD900HFY120P1S
Manufacturer STARPOWER
File Size 326.07 KB
Description IGBT
Datasheet download datasheet GD900HFY120P1S Datasheet

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Full PDF Text Transcription

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GD900HFY120P1S STARPOWER SEMICONDUCTOR GD900HFY120P1S 1200V/900A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electric vehicle and solar power. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Maximum junction temperature 175oC  Low inductance case  Isolated copper baseplate using DBC technology  High power and thermal cycling capability Typical Applications  High Power Converter  Solar Power  Hybrid and Electric Vehicle Equivalent Circuit Schematic IGBT Module IGBT ©2023 STARPOWER Semiconductor Ltd.
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