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MD22HTC120P6HE - SiC MOSFET

General Description

STARPOWER SiC MOSFET Power Module provides very low RDS(on) as well as high blocking voltage.

It’s designed for the applications such as hybrid and electric vehicle.

Key Features

  • SiC power MOSFET.
  • High blocking voltage with low RDS(on).
  • Easy to parallel and simple to drive.
  • Low inductance case avoid oscillations.
  • Isolated copper pinfin baseplate using Si3N4 AMB technology Typical.

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Datasheet Details

Part number MD22HTC120P6HE
Manufacturer STARPOWER
File Size 634.01 KB
Description SiC MOSFET
Datasheet download datasheet MD22HTC120P6HE Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MD22HTC120P6HE STARPOWER SEMICONDUCTOR MD22HTC120P6HE 1200V/2.18mΩ 6 in one-package SiC MOSFET Module SiC MOSFET General Description STARPOWER SiC MOSFET Power Module provides very low RDS(on) as well as high blocking voltage. It’s designed for the applications such as hybrid and electric vehicle. Features  SiC power MOSFET  High blocking voltage with low RDS(on)  Easy to parallel and simple to drive  Low inductance case avoid oscillations  Isolated copper pinfin baseplate using Si3N4 AMB technology Typical Applications  Automotive application  Hybrid and electric vehicle  Inverter for motor drive Equivalent Circuit Schematic ©2021 STARPOWER Semiconductor Ltd.