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MD22HTS120P6HET - SiC MOSFET

General Description

STARPOWER SiC MOSFET Power Module provides very low RDS(on) as well as high blocking voltage.

It’s designed for the applications such as hybrid and electric vehicle.

Key Features

  • SiC power MOSFET.
  • High blocking voltage with low RDS(on).
  • Easy to parallel and simple to drive.
  • Low inductance case avoid oscillations.
  • Isolated copper pinfin baseplate using Si3N4 AMB technology Typical.

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Datasheet Details

Part number MD22HTS120P6HET
Manufacturer STARPOWER
File Size 738.22 KB
Description SiC MOSFET
Datasheet download datasheet MD22HTS120P6HET Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MD22HTS120P6HET STARPOWER SEMICONDUCTOR MD22HTS120P6HET 1200V/2.20mΩ 6 in one-package SiC MOSFET Module SiC MOSFET General Description STARPOWER SiC MOSFET Power Module provides very low RDS(on) as well as high blocking voltage. It’s designed for the applications such as hybrid and electric vehicle. Features  SiC power MOSFET  High blocking voltage with low RDS(on)  Easy to parallel and simple to drive  Low inductance case avoid oscillations  Isolated copper pinfin baseplate using Si3N4 AMB technology Typical Applications  Automotive application  Hybrid and electric vehicle  Inverter for motor drive Equivalent Circuit Schematic ©2024 STARPOWER Semiconductor Ltd.