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10NK70Z - N-Channel MOSFET

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/10 STP10NK70.

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Datasheet Details

Part number 10NK70Z
Manufacturer STMicroelectronics
File Size 256.69 KB
Description N-Channel MOSFET
Datasheet download datasheet 10NK70Z Datasheet
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Full PDF Text Transcription

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STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET TYPE STP10NK70Z STP10NK70ZFP s s s s s s s VDSS 700 V 700 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8.6 A 8.6 A Pw 150 W 35 W TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 2 TO-220 TO-220FP DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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