120N2VH5 Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. 1 2 3 4 PowerFLAT™ 5x6 Figure.
120N2VH5 Key Features
- Improved die-to-footprint ratio
- Very low profile package
- Very low thermal resistance
- Conduction losses reduced
- Switching losses reduced
- 2.5 V gate drive
- Very low threshold device