120N2VH5 Overview
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.
Key Features
- Improved die-to-footprint ratio
- Very low profile package
- Very low - Conduction losses reduced
- Switching losses reduced
- 2.5 V gate drive
- Very low threshold device
