13N60M2-045Y Overview
Key Specifications
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Key Features
- Internal Order codes STF13N60M2(045Y) VDS @ TJmax 650 V RDS(on) max 0.38 Ω ID 11 A
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
