Datasheet4U Logo Datasheet4U.com

160N3LL - N-channel MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS RDS(on) max. ID PTOT STP160N3LL 30 V 3.2 mΩ 120 A 136 W.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
160N60UFD Ultrafast IGBT Fairchild Semiconductor
160NDD Diode-Diode Naina Semiconductor
160NTD Thyristor-Diode Naina Semiconductor
160NTT Thyristor-Thyristor Naina Semiconductor
1600EXD25 ALLOY-FREE RECTIFIER Toshiba Semiconductor

Other Datasheets by STMicroelectronics

Part Number Description
160N4F7 N-Channel Power MOSFET
160N75F3 N-channel MOSFET
160NS3LL N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP160N3LL N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STP160N3LL 30 V 3.2 mΩ 120 A 136 W • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP160N3LL Table 1: Device summary Marking Package 160N3LL TO-220 Packing Tube June 2015 DocID025073 Rev 3 This is information on a product in full production. 1/13 www.st.