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160N75F3 - N-channel MOSFET

General Description

This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™“strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility.

Key Features

  • Type STB160N75F3 STP160N75F3 STW160N75F3 VDSS 75V 75V 75V RDS(on) 4.2mΩ 4.5mΩ 4.5mΩ ID 120A (1) 3 120A (1) 120A (1) 1 2 TO-220 TO-247 1. Current limited by package.
  • Ultra low on-resistance 100% Avalanche tested 3 1 D²PAK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh™ low voltage Power MOSFET TARGET SPECIFICATION General features Type STB160N75F3 STP160N75F3 STW160N75F3 VDSS 75V 75V 75V RDS(on) 4.2mΩ 4.5mΩ 4.5mΩ ID 120A (1) 3 120A (1) 120A (1) 1 2 TO-220 TO-247 1. Current limited by package ■ ■ Ultra low on-resistance 100% Avalanche tested 3 1 D²PAK Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™“strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.