185N10F3
185N10F3 is N-channel Power MOSFET manufactured by STMicroelectronics.
Features
Order code STH185N10F3-2
VDS 100 V
RDS(on) max. 4.5 mΩ
ID 180 A
Figure 1: Internal schematic diagram D(TAB)
G(1)
- AEC-Q101 qualified
- Ultra low on-resistance
- 100% avalanche tested
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using STrip FET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
S(2, 3)
Order code STH185N10F3-2
AM01475v5
Table 1: Device summary
Marking
Packages
H2PAK-2
Packing Tape and reel
October 2016
Doc ID026910 Rev 3
This is information on a product in full production.
1/15
.st.
Contents
Contents
STH185N10F3-2
1 Electrical ratings 3
2 Electrical characteristics 4
2.1 Electrical characteristics (curves) 6
3 Test circuits 8
4 Package information 9
4.1 H²PAK-2 package information 10 4.2 H²PAK packing information 12
5 Revision history 14
2/15
Doc ID026910 Rev 3
STH185N10F3-2...
