185N10F3 Overview
This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. S(2, 3) Contents STH185N10F3-2 1 Electrical ratings ............................................................................. 3 2
185N10F3 Key Features
- AEC-Q101 qualified
- Ultra low on-resistance
- 100% avalanche tested