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185N55F3 - N-CHANNEL POWER MOSFET

General Description

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size™” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility.

Key Features

  • Type STB185N55F3 STP185N55F3 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) Pw 330W 330W 1. Value limited by wire bonding.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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185N10F3 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB185N55F3 STP185N55F3 N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET™ Power MOSFET Features Type STB185N55F3 STP185N55F3 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) Pw 330W 330W 1. Value limited by wire bonding ■ Ultra low on-resistance ■ 100% avalanche tested Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size™” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Applications ■ Switching applications – Automotive 3 2 1 TO-220 3 1 D2PAK Figure 1. Internal schematic diagram Table 1.