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19N3LLH6 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS STL19N3LLH6AG 30 V.
  • AEC-Q101 qualified.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.
  • Logic level.
  • Wettable flank package RDS(on) max. 33 mΩ ID 10 A PTOT 50 W G(4).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL19N3LLH6AG Datasheet Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package 4 3 2 1 PowerFLAT™ 5x6 D(5, 6, 7, 8) 8 76 5 Features Order code VDS STL19N3LLH6AG 30 V • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level • Wettable flank package RDS(on) max. 33 mΩ ID 10 A PTOT 50 W G(4) Applications • Switching applications S(1, 2, 3) 12 34 Top View NG4D5678S123 Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.