Download 19N3LLH6 Datasheet PDF
STMicroelectronics
19N3LLH6
19N3LLH6 is N-channel Power MOSFET manufactured by STMicroelectronics.
STL19N3LLH6AG Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STrip FET™ H6 Power MOSFET in a Power FLAT 5x6 package 4 3 2 1 Power FLAT™ 5x6 D(5, 6, 7, 8) 8 76 5 Features Order code STL19N3LLH6AG 30 V - AEC-Q101 qualified - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss - Logic level - Wettable flank package RDS(on) max. 33 mΩ ID 10 A PTOT 50 W G(4) Applications - Switching applications S(1, 2, 3) 12 34 Top View NG4D5678S123 Description This device is an N-channel Power MOSFET developed using the STrip FET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STL19N3LLH6AG Product summary Order...