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19N3LLH6 - N-channel Power MOSFET

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STMicroelectronics

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19N3LLH6 N-channel Power MOSFET by STMicroelectronics - Datasheet Preview — Datasheet preview – 19N3LLH6

Datasheet Details

Part number	19N3LLH6
Manufacturer	STMicroelectronics
File Size	637.89 KB
Description	N-channel Power MOSFET
Datasheet	19N3LLH6 Datasheet
Additional preview pages of the 19N3LLH6 datasheet.

Product details

Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

Features

Order code VDS STL19N3LLH6AG 30 V.
AEC-Q101 qualified.
Very low on-resistance.
Very low gate charge.
High avalanche ruggedness.
Low gate drive power loss.
Logic level.
Wettable flank package RDS(on) max. 33 mΩ ID 10 A PTOT 50 W G(4).

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Published: Jan 21, 2019 |