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19NM50N - N-Channel MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N RDS(on) max 0.25 Ω ID 14 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF19NM50N, STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω typ., 14 A MDmesh™ II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data 3 2 1 TO-220FP TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram Features Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N RDS(on) max 0.25 Ω ID 14 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications ' 7$% *  6  Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.