24N60DM2 Datasheet | STMicroelectronics

Features Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max 0.20 Ω 18 A - Extremely low gate charge and input capacitance - Lower RDS(on) x area vs previous generation - Low gate input resistance - 100% avalanche tested - Zener-protected - Extremely high dv/dt and avalanche capabilities Applications G(1) - Switching applications Description These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 Table 1. Device summary Marking Package D PAK TO-220 TO-247 Packaging Tape and reel Tube March 2014 This is information on a product in full production. Doc ID025499 Rev 3 1/21 .st. Contents Contents STB24N60DM2, STP24N60DM2,...