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24N60DM2 - N-Channel Power MOSFET

General Description

technology: MDmesh II Plus™ low Qg.

Key Features

  • Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A.
  • Extremely low gate charge and input capacitance.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.
  • Extremely high dv/dt and avalanche capabilities.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2, TAB) Features Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.