STMicroelectronics 2N3810K
The 2N3810K is a silicon planar epitaxial PNP transistor in Flat-8 package. It is specifically designed for aerospace Hi-Rel applications and available according to ESCC quality level.FEATURES
Datasheet - production data BVCEO IC (max) HFE at 5 V - 1 mA Operating temperature range 60 V 0.05 A > 150 -65°C to +200°C● Hi-Rel PNP dual matched bipolar transistor
● Linear gain characteristics
● Manufactured according to ESCC 5000 specifications
● Up to 100 krad(Si) low dose rate
DESCRIPTION
Table 1. Device summary Order code Agency specification EPPL Quality level Radiation level Lead Finish Marking 2N3810K1 - Y EM - Gold 2N2920AK1 2N3810KG 5207/005/10 Y ESCC Flight - Gold 520700510 2N3810KT 5207/005/11 Y 2N3810RKG 5207/005/10R Y 2N3810RKT 5207/005/11R Y ESCC Flight ESCC Flight ESCC Flight - Solder dip 520700511 100 Krad Gold 520700510R 100 Krad Solder dip 520700511R Packing Strip pack Strip pack Mass 0.7 g 0.7 g Strip pack 0.7 g Strip pack 0.7 g Strip pack 0.7 g October 2017 This is information on a product in full production. DocID024560 Rev 2 1/11 11 Contents Contents 2N3810K 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .