Datasheet Details
| Part number | 2N5323 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 67.36 KB |
| Description | SMALL SIGNAL PNP TRANSISTORS |
| Datasheet | 2N5323_STMicroelectronics.pdf |
|
|
Overview: 2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MEDIUM POWER AMPLIFIER NPN COMPLEMENTS ARE 2N5320 AND.
| Part number | 2N5323 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 67.36 KB |
| Description | SMALL SIGNAL PNP TRANSISTORS |
| Datasheet | 2N5323_STMicroelectronics.pdf |
|
|
|
The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case.
They are especially intended for high-voltage medium power application in industrial and commercial equipments.
The complementary NPN types are respectively the 2N5320 and 2N5321 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CEO V EBO IC I CM IB P tot P tot T stg , T j Parameter 2N5322 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T amb = 25 o C Total Dissipation at T c = 25 o C Storage and Junction Temperature -100 -100 -75 -6 -1.2 -2 -1 1 10 -65 to 200 Value 2N5323 -75 -75 -50 -5 V V V V A A A W W o Unit C June 1997 1/4 2N5322/2N5323 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 17.5 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CEV Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I C = 0) Collector-Emitter Breakdown Voltage (V BE = 1.5V) Test Conditions V CB = -80 V V CB = -60 V V EB = -5 V V EB = -4 V I C = -100 µ A for 2N5322 for 2N5323 I C = -10 mA for 2N5322 for 2N5323 I E = -100 µ A for 2N5322 for 2N5323 I C = -500 mA for 2N5322 for 2N5323 I C = -500 mA for 2N5322 for 2N5323 for 2N5322 I C = -500 mA I C = -1 A for 2N5323 I C = -500 mA I C = -500 mA I B1 = -50 mA I B = -50 mA -0.7 -1.2 V CE = -4 V -1.1 -1.4 V CE = -4 V V CE = -2 V V CE = -4 V f = 10 MHz V CC = -30 V 30 10 40 50 100 1000 130 V V V V for 2N5322 for 2N5323 for 2N5322 for 2N5323 -100 -75 -75 -50 -6 -5 -0.1 -0.5 Min.
Compare 2N5323 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N5323 | 10 Watt NPN-PNP Silicon Transistor | Fairchild Semiconductor |
 |
2N5323 | Silicon PNP Epitaxial Transistor | Seme LAB |
 |
2N5323 | COMPLEMENTARY PNP SILICON SWITCHING TRANSISTORS | Central Semiconductor |
 |
2N5323 | SWITCHING TRANSISTOR | Motorola |
 |
2N5323 | SILICON POWER SWITCHING TRANSISTORS | CDIL |
| Part Number | Description |
|---|---|
| 2N5320 | SMALL SIGNAL NPN TRANSISTORS |
| 2N5321 | SMALL SIGNAL NPN TRANSISTORS |
| 2N5322 | SMALL SIGNAL PNP TRANSISTORS |
| 2N5038 | HIGH CURRENT NPN SILICON TRANSISTOR |
| 2N5153HR | 5A PNP Transistor |
| 2N5154HR | Hi-Rel NPN bipolar transistor |
| 2N5179 | Silicon NPN Epitaxial Transistor |
| 2N5191 | NPN power transistors |
| 2N5192 | NPN power transistors |
| 2N5195 | Low voltage PNP power transistor |